0134201 - FZU-D 20030094 RIV DE eng J - Článek v odborném periodiku
Dózsa, L. - Horváth, Z. J. - Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Gombia, E. - Frigeri, P. - Mosca, R. - Franchi, S. - Pécz, B. - Dobos, L.
Investigation of defects created by growth of InAs quantum dots in GaAs.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 975-980. ISSN 1610-1634
Grant CEP: GA AV ČR IAA1010806
Grant ostatní: OTKA(HU) T 035272
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: quantum dots * point defects * InAs/GaAs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

InAs/GaAs quantum dot structures were investigated by capacitance and TEM methods. Generation of point defect cluster is strongly enhanced by quantum dot growth.

Trvalý link: http://hdl.handle.net/11104/0032117