Počet záznamů: 1
Photoluminescence of Ga.sub.0.94./sub.In.sub.0.06./sub.As.sub.0.13./sub.Sb.sub.0.87./sub. solid solution lattice matched to InAs
- 1.0133729 - FZU-D 20020110 RIV NL eng J - Článek v odborném periodiku
Moiseev, K. D. - Mikhailova, M. P. - Yakovlev, Yu. P. - Šimeček, Tomislav - Hulicius, Eduard - Oswald, Jiří
Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs.
Optical Materials. Roč. 19, - (2002), s. 455-459. ISSN 0925-3467. E-ISSN 1873-1252
Grant CEP: GA AV ČR IAA1010807
Grant ostatní: GA(XX) 990218330
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: semiconductors III-V * photoluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.879, rok: 2002
High quality epitaxial layers of GaIn0.06As0.13Sb quaternary solid solution with low In content were grown by LPE lattice matched to InAs substrate. The main types of radiative transitions for intentionally undoped p-type and for Te doped n-type GaIn0.06As0.13Sb solid solution were determined.
Trvalý link: http://hdl.handle.net/11104/0031690
Počet záznamů: 1