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In As/GaAs multiple quantum-size structures grown by MOVPE
- 1.0133656 - FZU-D 20010456 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Šimeček, Tomislav - Pangrác, Jiří - Oswald, Jiří
In As/GaAs multiple quantum-size structures grown by MOVPE.
Proceedings of the 7th International Workshop on Applied Physics of Condensed Matter. Liptovský Mikuláš: Department of Physics, Faculty of Logistics, Military Academy, 2001 - (Mudroň, J.; Šutta, P.; Müllerová, J.; Vajda, J.; Barančok, D.), s. 29-32. ISBN 80-8040-160-8.
[International Workshop on Applied Physics of Condensed Matter /7./. Liptovský Mikuláš (SK), 17.09.2001-19.09.2001]
Grant CEP: GA ČR GA102/99/0414; GA ČR GA202/99/1613
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: quantum dots * quantum rings * semiconductor lasers * InAs * MOVPE * photoluminescence * AFM
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
MOVPE can be used in certain cases even for the preparation of sub monolayer layers like In sub monoatomic layer in GaAs. Structures with quantum size objects as self-organised InAs quantum dots (QDs), quantum rings (QRs) and quasi-quantum wells (qQWs), more precisely - InAs delta layers) in GaAs matrix were reproducibly grown.
Trvalý link: http://hdl.handle.net/11104/0031619
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