Novák, Vít - Cukr, Miroslav - Schowalter, D. - Prettl, W.
Electron mobility in .I.n./I.-GaAs at low-temperature impurity breakdown.
Physical Review B. Roč. 62, č. 24 (2000), s. 16768-16772. ISSN 0163-1829
Grant CEP: GA AV ČR IAA1010011
Impakt faktor: 3.065, rok: 2000
http://hdl.handle.net/11104/0030995