Počet záznamů: 1
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
- 1.Nakahata, K. - Kamiya, T. - Fortmann, C. M. - Shimizu, I. - Stuchlíková, Hana - Fejfar, Antonín - Kočka, Jan
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
Journal of Non-Crystalline Solids. 266-269, - (2000), s. 341-346. ISSN 0022-3093. E-ISSN 1873-4812
Grant CEP: GA AV ČR IAA1010809; GA ČR GA202/98/0669
Impakt faktor: 1.269, rok: 2000
http://hdl.handle.net/11104/0030966
Počet záznamů: 1