Počet záznamů: 1
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
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$a Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas 215 $a 6 s. 463 -1
$1 001 cav_un_epca*0257058 $1 011 $a 0022-3093 $e 1873-4812 $1 200 1 $a Journal of Non-Crystalline Solids $v 266-269, - (2000), s. 341-346 $1 210 $c Elsevier 700 -1
$3 cav_un_auth*0063651 $a Nakahata $b K. $y JP $4 070 701 -1
$3 cav_un_auth*0063652 $a Kamiya $b T. $y JP $4 070 701 -1
$3 cav_un_auth*0063653 $a Fortmann $b C. M. $y JP $4 070 701 -1
$3 cav_un_auth*0062060 $a Shimizu $b I. $y JP $4 070 701 -1
$3 cav_un_auth*0062683 $a Stuchlíková $b Hana $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100196 $a Fejfar $b Antonín $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100295 $a Kočka $b Jan $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i.
Počet záznamů: 1