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Lasers with thin strained InAs layers in GaAs - electroluminescence and photoabsorption at elevated temperatures
- 1.Mačkal, A., Hazdra, P., Hulicius, E., Pangrác, J., Melichar, K. Lasers with thin strained InAs layers in GaAs - electroluminescence and photoabsorption at elevated temperatures. In: Workshop 2003. Praha: ČVUT, 2003, s. 446-447.
Počet záznamů: 1