Počet záznamů: 1
Lasers with thin strained InAs layers in GaAs absorption and electroluminescence
SYS 0100041 LBL 00000nam^^22^^^^^^^^450 005 20160616110023.0 101 0-
$a eng 102 $a CZ 200 1-
$a Lasers with thin strained InAs layers in GaAs absorption and electroluminescence 215 $a 2 s. 463 -1
$1 200 1 $a Proceedings of the International Student Conference on Electrical Engineering $v s. EI20-EI21 $1 210 $a Praha $c Faculty of Electrical Engineering CTU $d 2003 $1 225 1 $a Book of Extended Abstracts. 541 $a Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence $z cze 610 1-
$a strained quantum well 610 1-
$a InAs 610 1-
$a GaAs 610 1-
$a polarisation 610 1-
$a electroluminescence 610 1-
$a photoabsorption 700 -1
$a Mačkal $b Adam $p FZU-D $4 070 $3 cav_un_auth*0100364 $T Fyzikální ústav AV ČR, v. v. i.
Počet záznamů: 1