Počet záznamů: 1
At the gates: the tantalum-rich phase Hf.sub.3./sub.Ta.sub.2./sub.O.sub.11./sub. and its commensurately modulated structure
- 1.0502082 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
Wiedemann, D. - Luedtke, T. - Palatinus, Lukáš - Willinger, E. - Willinger, M.G. - Muehlbauer, M.J. - Lerch, M.
At the gates: the tantalum-rich phase Hf3Ta2O11 and its commensurately modulated structure.
Inorganic Chemistry. Roč. 57, č. 22 (2018), s. 14435-14442. ISSN 0020-1669. E-ISSN 1520-510X
Institucionální podpora: RVO:68378271
Klíčová slova: field-effect transistors * hafnium tantalum oxides * crystal-structure * electron microscopy * X-ray diffraction
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.850, rok: 2018
Generic mixtures in the system (Zr,Hf)O2− (Nb,Ta)2O5 are employed as tunable gate materials for fieldeffect transistors. Whereas production processes and target compositions are well-defined, resulting crystal structures are vastly unexplored. In this study, we summarize the sparse reported findings and present the new phase Hf3Ta2O11 as synthesized via a sol−gel route. Its commensurately modulated structure represents the hitherto unknown, metal(V)-richest member of the family (Zr,Hf)x(Nb,Ta)2OO2x+5.
Trvalý link: http://hdl.handle.net/11104/0294028
Počet záznamů: 1