Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Savchenko, Dariia; Yatsyk, D.M.; Genkin, O.M.; Nosachov, Yu.F.; Drozdenko, O.V.; Moiseenko, V.I.; Kalabukhova, E.N.

doi:https://dx.doi.org/10.15407/spqeo26.01.030

Počet záznamů: 1

Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

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SYSNO ASEP	0579305
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
Tvůrce(i)	Savchenko, Dariia (FZU-D)_{RID, ORCID} Yatsyk, D.M. (UA) Genkin, O.M. (UA) Nosachov, Yu.F. (UA) Drozdenko, O.V. (UA) Moiseenko, V.I. (UA) Kalabukhova, E.N. (UA)
Celkový počet autorů	7
Zdroj.dok.	Semiconductor Physics Quantum Electronics & Optoelectronics. - : Natsional'na Akademiya Nauk Ukrainy - ISSN 1560-8034 Roč. 26, č. 1 (2023), s. 30-35
Poč.str.	6 s.
Jazyk dok.	eng - angličtina
Země vyd.	UA - Ukrajina
Klíč. slova	conductivity ; SiC ; cavity perturbation method ; activation energy
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	EF16_019/0000760 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
Způsob publikování	Open access
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000958234100004
EID SCOPUS	85152599179
DOI	10.15407/spqeo26.01.030
Anotace	The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration (ND – NA) ≈ 1∙1017...4∙1019 cm–3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10^17cm^–3, ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙10^19 cm^-3, ε1 = 13.5 meV and ε3 = 3.5 meV for (ND–NA) ≈ 4∙10^19 cm^–3.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2024
Elektronická adresa	https://hdl.handle.net/11104/0348145

Počet záznamů: 1