Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Kjeldby, S. B. - Azarov, A. - Nguyen, P. D. - Venkatachalapathy, V. - Mikšová, Romana - Macková, Anna - Kuznetsov, A. - Prytz, O. - Vines, L.
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide.
Journal of Applied Physics. Roč. 131, č. 12 (2022), č. článku 125701. ISSN 0021-8979. E-ISSN 1089-7550
Výzkumná infrastruktura: CANAM II - 90056
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 3.2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1063/5.0083858
http://hdl.handle.net/11104/0331142