Počet záznamů: 1
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
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$a Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide 215 $a 10 s. $c P 463 -1
$1 001 cav_un_epca*0256872 $1 011 $a 0021-8979 $e 1089-7550 $1 200 1 $a Journal of Applied Physics $v Roč. 131, č. 12 (2022) $1 210 $c AIP Publishing 610 $a Electron energy loss spectroscopy 610 $a High resolution transmission electron microscopy 610 $a Rutherford backscattering spectroscopy 700 -1
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Počet záznamů: 1