Počet záznamů: 1
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
- 1.Kjeldby, S. B., Azarov, A., Nguyen, P. D., Venkatachalapathy, V., Mikšová, R., Macková, A., Kuznetsov, A., Prytz, O., Vines, L. Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. 2022, 131(12), 125701. ISSN 0021-8979. E-ISSN 1089-7550. Dostupné z: doi: 10.1063/5.0083858.
Počet záznamů: 1