Počet záznamů: 1
Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
SYS 0303955 LBL 00000nam^^22^^^^^^^^450 005 20240103180941.6 101 0-
$a eng 102 $a GB 200 1-
$a Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE 215 $a 8 s. 463 -1
$1 001 cav_un_epca*0257590 $1 011 $a 0268-1242 $e 1361-6641 $1 200 1 $a Semiconductor Science and Technology $v Roč. 17, č. 1 (2002), s. 39-46 $1 210 $c Institute of Physics Publishing 610 1-
$a photoluminescence 610 1-
$a silicon 610 1-
$a epitaxial growth 700 -1
$3 cav_un_auth*0099914 $a Agert $b C. $y DE $4 070 701 -1
$3 cav_un_auth*0101660 $a Gladkov $b Petar $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0099915 $a Bett $b A. W. $y DE $4 070
Počet záznamů: 1