Počet záznamů: 1
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
- 1.0541992 - ÚFM 2022 RIV US eng J - Článek v odborném periodiku
Vacek, Petr - Frentrup, M. - Lee, L. Y. - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Gröger, Roman - Oliver, Rachel A.
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers.
Journal of Applied Physics. Roč. 129, č. 15 (2021), č. článku 155306. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠk(CZ) EF16_027/0008056
Institucionální podpora: RVO:68081723
Klíčová slova: stacking faults * gallium nitride * transmission electron microscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.546, rok: 2020
Způsob publikování: Open access
The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.
Trvalý link: http://hdl.handle.net/11104/0319746
Počet záznamů: 1