Structural and optical properties of Gd implanted GaN with various crystallographic orientations

0479677 - ÚJF 2018 RIV CH eng J - Článek v odborném periodiku
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Klímová, K. - Sedmidubský, D. - Pristovsek, M. - Mikulics, M. - Lorinčík, Jan - Bottger, R. - Akhmadaliev, S.
Structural and optical properties of Gd implanted GaN with various crystallographic orientations.
Thin Solid Films. Roč. 638, SEP (2017), s. 63-72. ISSN 0040-6090. E-ISSN 1879-2731
Grant CEP: GA ČR GA13-20507S; GA ČR GA15-01602S; GA MŠMT LM2015056
Institucionální podpora: RVO:67985882 ; RVO:61389005
Klíčová slova: GaN implantation * RBS channelling * optical properties of Gd implanted GaN
Obor OECD: 1.3 Physical sciences; Optics (including laser optics and quantum optics) (URE-Y)
Impakt faktor: 1.939, rok: 2017

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.
Trvalý link: http://hdl.handle.net/11104/0275642