STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS

0356058 - ÚFE 2012 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Yatskiv, Roman - Grym, Jan - Černohorský, O. - Zavadil, Jiří - Kostka, František
STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS.
CONFERENCE PROCEEDINGS NANOCON 2010. Ostrava: TANGER, 2010 - (Zbořil, R.), s. 182-187. ISBN 978-80-87294-19-2.
[NANOCON 2010. International Conference /2./. Olomouc (CZ), 12.10.2010-14.10.2010]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blank side of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP.
Trvalý link: http://hdl.handle.net/11104/0194678