Directly grown nanocrystalline diamond field-effect transistor microstructures

0353839 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Kozak, Halyna - Kromka, Alexander - Babchenko, Oleg - Rezek, Bohuslav
Directly grown nanocrystalline diamond field-effect transistor microstructures.
Sensor Letters. Roč. 8, č. 3 (2010), s. 482-487. ISSN 1546-198X
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA AV ČR(CZ) IAAX00100902; GA AV ČR KAN400100652
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: nanocrystalline diamond * microstructures * atomic force microscopy * surface conductivity * field-effect transistor
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.602, rok: 2010

Nanocrystalline diamond microscopic structures (5 μm width) are grown directly on Si/SiO2 substrates by patterning of a nucleation layer using photolithography prior to the diamond growth. The diamond microstructures exhibit clear transistor characteristics in both solid-state and solution-gated field-effect transistor configurations.
Trvalý link: http://hdl.handle.net/11104/0192971