Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study

0353060 - ÚFCH JH 2011 RIV US eng J - Článek v odborném periodiku
Kalbáč, Martin - Hsieh, Y. P. - Farhat, H. - Kavan, Ladislav - Hofmann, M. - Kong, J. - Dresselhaus, M. S.
Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study.
Nano Letters. Roč. 10, č. 11 (2010), s. 4619-4626. ISSN 1530-6984. E-ISSN 1530-6992
Grant CEP: GA ČR GC203/07/J067; GA AV ČR IAA400400804; GA AV ČR IAA400400911; GA AV ČR KAN200100801; GA MŠMT ME09060
Výzkumný záměr: CEZ:AV0Z40400503
Klíčová slova: single wall carbon nanotubes * Raman spectroscopy * defects
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 12.186, rok: 2010

Raman spectroscopy and in situ Raman spectroelectrochemistry have been used to study the influence of defects on the Raman spectra of semiconducting individual single-walled carbon nanotubes (SWCNTs). The defects were created intentionally on part of an originally defect-free individual semiconducting nanotube, which allowed us to analyze how defects influence this particular nanotube. The formation of defects was followed by Raman spectroscopy that showed D band intensity coming from the defective part and no D band intensity coming from the original part of the same nanotube. It. is shown that the presence of defects also reduces the intensity of the symmetry-allowed Raman features. Furthermore, the changes to the Raman resonance window upon the introduction of defects are analyzed. It is demonstrated that defects lead to both a broadening of the Raman resonance profile and a decrease in the maximum intensity of the resonance profile.
Trvalý link: http://hdl.handle.net/11104/0192406