Chemical Route for Si/C Coated Germanium Nanowires

0352967 - ÚCHP 2011 RIV NL eng J - Článek v odborném periodiku
Dřínek, Vladislav - Šubrt, Jan - Klementová, Mariana - Fajgar, Radek
Chemical Route for Si/C Coated Germanium Nanowires.
Journal of Analytical and Applied Pyrolysis. Roč. 89, č. 2 (2010), s. 255-260. ISSN 0165-2370. E-ISSN 1873-250X
Grant CEP: GA ČR GA203/09/1088
Výzkumný záměr: CEZ:AV0Z40720504; CEZ:AV0Z40320502
Klíčová slova: nanowire * germanium * germylene
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 2.234, rok: 2010

Chemical processes in course of low pressure CVD of tris(trimethylsilyl)germane(SiCH3)3GeH leading to formation of shelled germanium nanowires are discussed.The nanowires were grown in the flow mode at 50–60 Pa and365 ◦C of substrate temperature. The wires consist of a crystalline Ge core surrounded bya two-layer jacket.FTIR measurements and GC–MS analysis let conclude that precursor decomposition starts by an intramolecular elimination of trimethylsilane HSiMe3 yielding bis(trimethylsilyl) germylene (SiMe3)2Ge:that polymerizes. Parallely,Si–Gebonds split,SiC based moieties for mSi/CshellandGe atoms crystalline core and nanocrystalline inner jacket.The samples were studied by SEM,HRTEM,EDX, FTIR and GC–MS techniques.
Trvalý link: http://hdl.handle.net/11104/0192333