Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface

0349314 - FZÚ 2011 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Dubecký, F. - Kováč, J. - Mudroň, J. - Hubík, Pavel - Dubecký, M. - Gombia, E.
Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface.
APCOM 2010. Bratislava: Slovak University of Technology, 2010 - (Vajda, J.; Weis, M.), s. 29-32. ISBN 978-80-227-3307-6.
[International Conference on Applied Physics of Condensed Matter /16./. Malá Lučivná (SK), 16.06.2010-18.06.2010]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: SI-GaAs * detectors * photocurrent * blocking electrodes
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

SI GaAs based photodetectors were studied by photocurrent and current-voltage methods. Features observed in photocurrent spectra of the detectors with Gd top contact indicate special properties of this kind of the metallization and, possibly, a formation of 2D system near the contact.
Trvalý link: http://hdl.handle.net/11104/0189585