Effect of local doping on the electronic properties of epitaxial graphene on SiC

0343352 - FZÚ 2011 RIV DE eng J - Článek v odborném periodiku
Červenka, Jiří - van der Ruit, K. - Flipse, K.
Effect of local doping on the electronic properties of epitaxial graphene on SiC.
Physica Status Solidi A. Roč. 207, č. 3 (2010), s. 595-598. ISSN 1862-6300. E-ISSN 1862-6319
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: graphene * silicon carbide * scanning tunneling microscopy * electronic structure
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.458, rok: 2010

Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed.
Trvalý link: http://hdl.handle.net/11104/0185852