Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

0341570 - FZÚ 2011 RIV DE eng J - Článek v odborném periodiku
Červenka, Jiří - Ledinský, Martin - Stuchlíková, The-Ha - Stuchlík, Jiří - Výborný, Zdeněk - Holovský, Jakub - Hruška, Karel - Fejfar, Antonín - Kočka, Jan
Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition.
Physica Status Solidi. Roč. 4, 1-2 (2010), s. 37-39. ISSN 1862-6254. E-ISSN 1862-6270
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: nanowires * silicon * scanning electron microscopy * hemical vapor deposition * Raman spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.660, rok: 2010
http://www3.interscience.wiley.com/cgi-bin/fulltext/123213957/HTMLSTART

Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma-enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 μm/min) and unique sharpness (< 10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy.
Trvalý link: http://hdl.handle.net/11104/0184509