Počet záznamů: 1
Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface
- 1.0340742 - FZÚ 2010 RIV NL eng J - Článek v odborném periodiku
Jiříček, Petr - Cukr, Miroslav - Bartoš, Igor - Sadowski, J.
Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface.
Surface Science. Roč. 603, č. 20 (2009), s. 3088-3093. ISSN 0039-6028. E-ISSN 1879-2758
Grant CEP: GA ČR GA202/07/0601; GA AV ČR IAA100100628
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: gallium arsenide * angle resolved photoemission * synchrotron radiation photoelectron spectroscopy * molecular beam epitaxy * surface core level shift
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.798, rok: 2009
The α and β phases of the GaAs(001)-c(4x4) surface were prepared by molecular beam epitaxy. The properties of these phases were studied by UPS and XPS using synchrotron radiation as an excitation source.
Trvalý link: http://hdl.handle.net/11104/0183924
Počet záznamů: 1