The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes

0334512 - ÚFCH JH 2011 RIV US eng J - Článek v odborném periodiku
Kalbáč, Martin - Kavan, Ladislav
The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes.
Carbon. Roč. 48, č. 3 (2010), s. 832-838. ISSN 0008-6223. E-ISSN 1873-3891
Grant CEP: GA ČR GC203/07/J067; GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z40400503
Klíčová slova: Raman spectroscopy * single walled carbon nanotubes * nanocomposites
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 4.893, rok: 2010

The D band in the Raman spectra of single walled carbon nanotubes is considered as an indicator of defects in carbon nanotubes. However, its dependence on charge-transfer doping is generally ignored, despite the studied samples are often naturally doped. We studied the intensity of the D band, the ratio of the intensities of the D band and TG band (ID/ITG) and the ratio of the intensities of the D and G0 band (ID/IG’) in the Raman spectra of the single walled carbon nanotubes in dependence on a doping level. We tested two laser excitation energies viz 2.41 and 1.92 eV, which are in resonance with semiconducting and metallic tubes, respectively in our sample. It is shown that the D band intensity is significantly attenuated in doped carbon nanotubes sample for both semiconducting and metallic tubes. The ID/ITG ratio is weakly dependent on doping for semiconducting tubes but for metallic tubes the ID/ITG ratio exhibits strong dependence on doping.
Trvalý link: http://hdl.handle.net/11104/0179225