0303955 - URE-Y 20020094 RIV GB eng J - Článek v odborném periodiku
Agert, C. - Gladkov, Petar - Bett, A. W.
Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE.
Semiconductor Science and Technology. Roč. 17, č. 1 (2002), s. 39-46. ISSN 0268-1242. E-ISSN 1361-6641
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: photoluminescence * silicon * epitaxial growth
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.241, rok: 2002

We study electrical properties and the photoluminescence /PL/ of Si-doped bulk GaSb grown by metal-organic vapor phase epitaxy. Si was found to behave a substitution shallow acceptor in GaSb with activation energy of 9 meV, which is responsible for the 0.8 eV line in the PL spectrum of GaSb.
Trvalý link: http://hdl.handle.net/11104/0114099