0303745 - URE-Y 20000130 RIV US eng J - Článek v odborném periodiku
Žďánský, Karel
Quasistatic capacitance-voltage characteristics of plane-parallel structures: Metal/semi-insulator/metal.
Journal of Applied Physics. Roč. 88, č. 4 (2000), s. 2024-2029. ISSN 0021-8979. E-ISSN 1089-7550
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074; EU(XE) PECO 93
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductors * insulators * capacitance
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.180, rok: 2000

Quasistatic capacitance-voltage characteristics of plane-parallel structures of the semi-insulating GaAs with two metal contacts are calculated numerically. Under consideration is the relaxation regime for the charge transport in the semi-insulator. We analyze metal/semi-insulator/metal structures for various parameters of the metal contacts and of the semi-insulator. A more detailed analysis is performed for the following structure: p-type like metal contact/n-type semi-insulator/n-type like metal contact.
Trvalý link: http://hdl.handle.net/11104/0113932