0161382 - SLCHPL-S 20000005 RIV NL eng J - Článek v odborném periodiku
Němec, Petr - Frumar, M. - Frumarová, Božena - Jelínek, Miroslav - Lančok, Ján - Jedelský, J.
Pulsed laser deposition of pure and praseodymium-doped Ge-Ga-Se amorphous chalcogenide films.
Optical Materials. Roč. 15, - (2000), s. 191-197. ISSN 0925-3467. E-ISSN 1873-1252
Grant CEP: GA ČR GA203/98/0103; GA AV ČR KSK2050602
Výzkumný záměr: CEZ:AV0Z4050913
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.165, rok: 2000

Pure and Pr - doped thin films of Ge30Ga5Se65 amorphous systemwere prepared by the pulsed laser deposition (PLD) technique.The composition of the prepared films was close to the compositionof the used targets of bulk chalcogenide glasses. Two luminiscencebands near 1340 and 1610 nm were observed in the emission spectraof Pr - doped thin films.
Trvalý link: http://hdl.handle.net/11104/0058740