0134496 - FZU-D 20030396 RIV DE eng J - Článek v odborném periodiku
Remeš, Zdeněk - Kalish, R. - Uzan-Saguy, C. - Baskin, E. - Nesládek, M. - Koizumi, S.
Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures.
Physica Status Solidi A. Roč. 199, č. 1 (2003), s. 82-86. ISSN 0031-8965
GRANT EU: European Commission(XE) HPRN-CT-1999-00139
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: photo-Hall measurements * CVD diamonnd * phosphorus doped
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.950, rok: 2003

DC photo-conductivity and photo-Hall effect measurements were applied for the first time to measure electron transport properties of two 2-4X10 18 cm -3 P-doped n-type diamonds at low temperatures down to 10 K. The low IR photosensitivity, sub-linear variation of free-electron concentration with IR intensity as well as their freeze-out at very low temperature were observed.
Trvalý link: http://hdl.handle.net/11104/0032396