0134414 - FZU-D 20030314 RIV NL eng J - Článek v odborném periodiku
Ito, M. - Ro, K. - Yoneyama, S. - Ito, Y. - Uyama, H. - Mates, Tomáš - Ledinský, Martin - Luterová, Kateřina - Fojtík, Petr - Stuchlíková, The-Ha - Fejfar, Antonín - Kočka, Jan
Silicon thin films deposited at very low substrate temperatures.
Thin Solid Films. Roč. 442, - (2003), s. 163-166. ISSN 0040-6090. E-ISSN 1879-2731
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: amorphous materials * microcrystal-Si * chemical vapor deposition(CVD)
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.598, rok: 2003

The influence of the substrate temperature (in the wide range of 35-200 o C) on the structure and properties of silicon thin films was studied. It seems that low substrate temperature a parameter window exists where the silicon thin films can be grown with the properties combining both crystalline and amorphous behavior.
Trvalý link: http://hdl.handle.net/11104/0032317