0573745 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Kočí, Michal - Izsák, T. - Vanko, G. - Sojková, M. - Hrdá, J. - Szabó, Ondrej - Husák, M. - Végsö, K. - Varga, Marián - Kromka, Alexander
Improved gas sensing capabilities of MoS₂/diamond heterostructures at room temperature.
ACS Applied Materials and Interfaces. Roč. 15, č. 28 (2023), s. 33191-34322. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA MŠMT LM2023051; GA ČR(CZ) GF23-04322L
Grant ostatní: AV ČR(CZ) SAV-23-11
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: gas sensors * H-terminated diamond * MoS₂ * MoS₂/H-NCD heterostructure * room temperature * P-N junction * sensitivity * gas interaction model
Obor OECD: Materials engineering
Impakt faktor: 9.5, rok: 2022
Způsob publikování: Open access

MoS2 and NCD have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications. In this study, the synthesis of MoS2 and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: NO2, NH3 and neutral synthetic air. It was observed that the heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO2 and reducing NH3 gases compared to pure active materials. Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without heterostructure. The gas interaction model independently considers the influence of each material as well as the current flow mechanism through the formed P-N heterojunction.
Trvalý link: https://hdl.handle.net/11104/0344127