Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale

0560529 - ÚFCH JH 2023 RIV DE eng J - Článek v odborném periodiku
Chen, Y.-S. - Chiu, S.-K. - Tsai, D.-L. - Liu, Ch.-Y. - Ting, H.-A. - Yao, Y.-Ch. - Son, H. - Haider, Golam - Kalbáč, Martin - Ting, Ch.-Ch. - Chen, Y. F. - Hofmann, M. - Hsieh, Y.-P.
Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale.
NPJ 2D MATER APPL. Roč. 6, č. 1 (2022), č. článku 54. E-ISSN 2397-7132
Grant CEP: GA ČR(CZ) GX20-08633X
Institucionální podpora: RVO:61388955
Klíčová slova: QUALITY MONOLAYER WS2 * PHOTOLUMINISCENCE * OPTICAL-PROPERTIES
Obor OECD: Physical chemistry
Impakt faktor: 9.7, rok: 2022
Způsob publikování: Open access

The integration of 2D materials into future applications relies on advances in their quality and production. We here report a synthesis method that achieves ultrahigh optoelectronic performance at unprecedented fabrication scales. A mediator-assisted chemical vapor deposition process yields tungsten-disulfide (WS2) with near-unity photoluminescence quantum yield, superior photosensitivity and improved environmental stability. This enhancement is due to the decrease in the density of lattice defects and charge traps brought about by the self-regulating nature of the growth process. This robustness in the presence of precursor variability enables the high-throughput growth in atomically confined stacks and achieves uniform synthesis of single-layer WS2 on dozens of closely packed wafers. Our approach enhances the scientific and commercial potential of 2D materials as demonstrated in producing large-scale arrays of record-breaking optoelectronic devices.
Trvalý link: https://hdl.handle.net/11104/0333444