0552393 - ÚACH 2023 RIV CH eng J - Článek v odborném periodiku
Bakardjieva, Snejana - Plocek, Jiří - Ismagulov, Bauyrzhan - Kupčík, Jaroslav - Vacík, Jiří - Ceccio, Giovanni - Lavrentev, Vasyl - Němeček, J. - Michna, Š. - Klie, R.
The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples.
Nanomaterials. Roč. 12, č. 3 (2022), č. článku 307. ISSN 2079-4991. E-ISSN 2079-4991
Grant CEP: GA ČR(CZ) GA18-21677S
Výzkumná infrastruktura: CANAM II - 90056
Institucionální podpora: RVO:61388980 ; RVO:61389005
Klíčová slova: M2AX * Nanoindentation * Powders * STEM * Thin films * Ti2SnC
Obor OECD: Inorganic and nuclear chemistry; Chemical engineering (plants, products) (UJF-V)
Impakt faktor: 5.3, rok: 2022 ; AIS: 0.712, rok: 2022
Způsob publikování: Open access
DOI: https://doi.org/10.3390/nano12030307

Layered ternary Ti2SnC carbides have attracted significant attention because of their ad-vantage as a M2AX phase to bridge the gap between properties of metals and ceramics. In this study, Ti2SnC materials were synthesized by two different methods—an unconventional low-energy ion facility (LEIF) based on Ar+ ion beam sputtering of the Ti, Sn, and C targets and sintering of a com-pressed mixture consisting of Ti, Sn, and C elemental powders up to 1250 °C. The Ti2SnC nanocrys-talline thin films obtained by LEIF were irradiated by Ar+ ions with an energy of 30 keV to the fluence of 1.1015 cm−2 in order to examine their irradiation-induced resistivity. Quantitative structural analysis obtained by Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) confirmed transition from ternary Ti2SnC to binary Ti0.98C carbide due to irradiation-induced β-Sn surface segregation. The nanoindentation of Ti2SnC thin nanocrys-talline films and Ti2SnC polycrystalline powders shows that irradiation did not affect significantly their mechanical properties when concerning their hardness (H) and Young’s modulus (E) We high-lighted the importance of the HAADF-STEM techniques to track atomic pathways clarifying the behavior of Sn atoms at the proximity of irradiation-induced nanoscale defects in Ti2SnC thin films.
Trvalý link: http://hdl.handle.net/11104/0327534