ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

0540385 - FZÚ 2021 RIV HU eng A - Abstrakt
Stuchlíková, The-Ha - Čermák, Jan - Babčenko, Oleg - Remeš, Zdeněk - Kromka, Alexander - Stuchlík, Jiří
ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C.
Book of Abstracts of the 18th International Conference on Thin Films & 18th Joint Vacuum Conference. Budapest, 2020 - (Pécz, B.). s. 149-149
[18th International Conference on Thin Films & 18th Joint Vacuum Conference. 22.11.2020-26.11.2020, Budapest]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * diamond thin films * a-SiC:H * thin film diodes
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://akcongress.com/ictf-jvc/

In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.

Trvalý link: http://hdl.handle.net/11104/0318010