Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications

0534005 - ÚJF 2021 RIV GB eng J - Článek v odborném periodiku
Torrisi, Alfio - Horák, Pavel - Vacík, Jiří - Cannavó, Antonino - Ceccio, Giovanni - Vaniš, Jan - Yatskiv, Roman - Grym, Jan
Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications.
Phosphorus, Sulfur and Silicon and the Related Elements. Roč. 195, č. 11 (2020), s. 932-935. ISSN 1042-6507. E-ISSN 1563-5325
Grant CEP: GA MŠMT LM2015056; GA ČR GA19-02804S
Institucionální podpora: RVO:61389005 ; RVO:67985882
Klíčová slova: chemiresistor * Cu-Ti * intermixing layers * SIMS analysis * thermal annealing
Obor OECD: Inorganic and nuclear chemistry; Electrical and electronic engineering (URE-Y)
Impakt faktor: 1.082, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1080/10426507.2020.1804166

On the perspective to develop CuO-TiO2MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25 keV Ar + ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 24 h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu-Ti-O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO(2)in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.
Trvalý link: http://hdl.handle.net/11104/0312228