Laser and ion beams graphene oxide reduction for microelectronic devices

0523925 - ÚJF 2021 RIV GB eng J - Článek v odborném periodiku
Torrisi, L. - Havránek, Vladimír - Torrisi, Alfio - Cutroneo, Mariapompea - Silipigni, L.
Laser and ion beams graphene oxide reduction for microelectronic devices.
Radiation Effects and Defects in Solids. Roč. 175, 3-4 (2020), s. 226-240. ISSN 1042-0150. E-ISSN 1029-4953
Grant CEP: GA MŠMT LM2015056; GA MŠMT EF16_013/0001812; GA ČR GA19-02482S
Institucionální podpora: RVO:61389005
Klíčová slova: Graphene oxide * ion beam reduction * lithography * laser * ion beam * electronic device
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 1.141, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1080/10420150.2019.1701456

Reduced graphene oxide (rGO) is a two-dimensional material, which is attracting increasing attention due to its special properties. It can be obtained by laser or ion beam irradiations of pristine graphene oxide (GO). It shows high mechanical resistance, considerable electric and thermal conductivity. All these rGO characteristics together with the high number of molecular species that can be embedded between its layers, make graphene oxide a potential material for electronic sensors or efficient support on which conductive strips, condensers, and micrometric electronic devices can be designed. In particular, as it is described in this paper, it is possible to carry out high spatial resolution lithography in GO by using a focused laser or micro ion beam in order to design macro, micro, and submicron geometrical structures. The use of the reduced graphene oxide for the laser and ion beam fabrication of electrical resistances and capacitances is presented.
Trvalý link: http://hdl.handle.net/11104/0308215