0521883 - FZÚ 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Zakopal, P. - Krůs, Miroslav - Kozlová, Michaela
Heavy ion acceleration by 10TW Ti:sapphire laser system at PALS.
Laser Acceleration of Electrons, Protons, and Ions IV. Bellingham: SPIE, 2017 - (Esarey, E.; Schroeder, C.; Gruner, F.), Roč. 10240 (2017), s. 1-4, č. článku 1024018. Proceedings of SPIE, 10240. ISBN 978-1-5106-0981-5. ISSN 0277-786X.
[Laser Acceleration of Electrons, Protons, and Ions IV. Prague (CZ), 24.04.2017-26.04.2017]
Grant CEP: GA MŠMT LM2015065
Institucionální podpora: RVO:68378271
Klíčová slova: ion beams * ion implantation * laser radiation * linear accelerators * sapphire * semiconductor laser
Obor OECD: Optics (including laser optics and quantum optics)
DOI: https://doi.org/10.1117/12.2279666

Laser-driven heavy-ion accelerator represents a possible compact table-top device with a potential to applications, in particular, ion implantation of PN junctions in semiconductors. We present generation of heavy ion beams, Ti and Fe with an energy of 210 keV and 440 keV, respectively. Such beams were accelerated from a front size of thick foils by p-polarized 600mJ, 50fs laser pulse. Ion energies were measured by time-of-flight spectrometers. Shot-to-shot stability of obtained energies was better than 30%.

Trvalý link: http://hdl.handle.net/11104/0306431