Počet záznamů: 1
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
- 1.0496537 - FZÚ 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Stuchlík, Jiří - Fajgar, Radek - Kupčík, Jaroslav - Remeš, Zdeněk - Stuchlíková, The-Ha
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles.
Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application. Ostrava: Tanger Ltd., 2018, s. 123-127. ISBN 9788087294819.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. Brno (CZ), 18.10.2017-20.10.2017]
Grant CEP: GA MŠk(CZ) LTC17029
Grant ostatní:AV ČR(CZ) KONNECT-007
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: PECVD * a-Si:H diode structures * Ge * nanoparticles
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus; CF - Fyzikální chemie a teoretická chemie (UCHP-M)
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UCHP-M)
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Trvalý link: http://hdl.handle.net/11104/0289330
Počet záznamů: 1