Počet záznamů: 1
Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I
- 1. 0488135 - FZU-D 2018 RIV GB eng J - Článek v odborném periodiku
Kohn, V.G. - Khikhlukha, Danila
Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I.
Acta Crystallographica A-Foundation and Advances. Roč. 72, May (2016), s. 349-356. ISSN 2053-2733
Grant CEP: GA MŠk EF15_008/0000162; GA MŠk ED1.1.00/02.0061
Grant ostatní:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162; ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061
Institucionální podpora: RVO:68378271
Klíčová slova: X-ray diffraction * silicon crystal * six-beam diffraction * section topography * computer simulations
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 5.725, rok: 2016
This paper reports computer simulations of the transmitted-beam intensity distribution for the case of six-beam (000, 220, 242, 044,224,202) diffraction of X-rays in a perfect silicon crystal of thickness 1 mm. Both the plane-wave angular dependence and the six-beam section topographs, which are usually obtained in experiments with a restricted beam (two-dimensional slit), are calculated. The angular dependence is calculated in accordance with Ewald's theory. The section topographs are calculated from the angular dependence by means of the fast Fourier transformation procedure. This approach allows one to consider, for the first time, the transformation of the topograph's structure due to the two-dimensional slit sizes and the distance between the slit and the detector. The results are in good agreement with the results of other works and with the experimental data.
Trvalý link: http://hdl.handle.net/11104/0282752