Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma

0486982 - FZÚ 2018 RIV CN eng A - Abstrakt
Domonkos, Mária - Ižák, Tibor - Varga, Marián - Potocký, Štěpán - Kromka, Alexander
Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma.
2nd International Conference on Applied Surface Science (ICASS). Dalian, 2017 - (Rudolph, H.). ISSN 0169-4332. E-ISSN 1873-5584.
[International Conference on Applied Surface Science (ICASS) /2./. 12.06.2017-15.06.2017, Dalian]
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: nucleation * Si substrates * VerS * HorS
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.elsevier.com/events/conferences/international-conference-on-applied-surface-science/programme

This work focuses on spontaneous nucleation on horizontally and vertically aligned nontreated Si substrates. Diamond growth is initiated using a CH₄/H₂/CO₂ gas mixture with varying H content for 5 and 10 hours. As a reference, nucleated substrates are investigated. The SEM and AFM images reveal variation in the properties of samples (size of grains, surface coverage, ND, film thickness) which depend on the sample alignment and Z-axes of VerS. Independently of deposition conditions, the grain size and density and film thickness decreases in the downward direction. The grain population exhibits a polymodal size distribution on the whole substrate for both VerS and HorS. Moreover, for both non-treated and nucleated samples the density and size of diamond grains grown on HorS are similar to the size/density on VerS at a specific Z-position. Our findings confirm that the linear antenna system can be routinely utilised for growing D on 3D substrates.

Trvalý link: http://hdl.handle.net/11104/0281687