0486531 - ÚFP 2018 RIV US eng J - Článek v odborném periodiku
Sobierajski, R. - Jacyna, I. - Dlužewski, P. - Klepka, M.T. - Klinger, D. - Pełka, J.B. - Burian, T. - Hájková, V. - Juha, Libor - Saksl, K. - Vozda, V. - Makhotkin, I. - Louis, E. - Faatz, B. - Tiedtke, K. - Toleikis, S. - Enkisch, H. - Hermann, M. - Strobel, S. - Loch, R.A. - Chalupský, J.
Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate.
Optics Express. Roč. 24, č. 14 (2016), s. 15468-15477. ISSN 1094-4087
Institucionální podpora: RVO:61389021
Klíčová slova: free-electron lasers * damage * x-rays * soft x-rays * extreme ultraviolet (EUV) * semiconductor materials * materials processing
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 3.307, rok: 2016
Web výsledku:
https://doi.org/10.1364/OE.24.015468
DOI: https://doi.org/10.1364/OE.24.015468

The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm(2). Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm(2)) and liquid state (54 mJ/cm(2)), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

Trvalý link: http://hdl.handle.net/11104/0281362