Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD

0483209 - FZÚ 2018 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Babchenko, O. - Vanko, G. - Lalinský, T. - Huran, J. - Haščík, Š. - Artemenko, Anna - Ižák, Tibor - Kromka, Alexander - Vincze, A. - Marton, M. - Vojs, M.
Influence of passivation coating on AlGaN/GaN heterostructure during the diamond CVD.
Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. Bratislava: Comenius University, 2017 - (Pinčík, E.), s. 13-14. ISBN 978-80-2234411-1.
[Progress in Applied Surface, Interface and Thin Film Science 2017. Florence (IT), 20.11.2017-23.11.2017]
Grant CEP: GA ČR(CZ) GBP108/12/G108
Grant ostatní: AV ČR(CZ) SAV-16-02
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * AlGaN/GaN heterostructures * XPS * SIMS
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

In this study, we use electronic structures (circular patterns for transition line measurements and high electron mobility transistors) fabricated on AlGaN/GaN heterostructure. The bare samples and samples passivated by thin (30 nm) SiOx, SiNx and SiC coatings were tested. We used high temperature stable Ir/Al multilayer Schottky metallization for gate contact. Diamond films were grown by selective area deposition from CH4/H2 gas mixture using MWCVD at 500°C. The SEM found that any of used protective coating was able to withstand mutual acting of hydrogen and high temperature during diamond deposition process with 100% effectivity. Nevertheless, even bare sample do not demonstrate so severe surface damage as was reported before. The X-ray photoelectron spectroscopy show high level of surface contamination after diamond deposition in particular by carbon while the SIMS reveal the bulk composition down to AlGaN/GaN heterostructure interface and variation of hydrogen amount.
Trvalý link: http://hdl.handle.net/11104/0278591