0476198 - FZÚ 2018 RIV US eng J - Článek v odborném periodiku
Hospodková, Alice - Oswald, Jiří - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Blažek, K. - Ledoux, G. - Dujardin, C. - Nikl, Martin
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure.
Journal of Applied Physics. Roč. 121, č. 21 (2017), 1-8, č. článku 214505. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠMT LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN heterostructure * scintillators * photoluminescence * cathodoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.176, rok: 2017
DOI: https://doi.org/10.1063/1.4984908

We compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed.

Trvalý link: http://hdl.handle.net/11104/0272721