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Growth and scintillation properties of 3 in. diameter Ce doped Gd.sub.3./sub.Ga.sub.3./sub.Al.sub.2./sub.O.sub.12./sub. scintillation single crystal

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    0470883 - FZU-D 2017 RIV NL eng J - Článek v odborném periodiku
    Kamada, K. - Shoji, Y. - Kochurikhin, V.V. - Okumura, S. - Yamamoto, S. - Nagura, A. - Yeom, J.Y. - Kurosawa, S. - Yokota, Y. - Ohashi, Y. - Nikl, Martin - Yoshikawa, A.
    Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal.
    Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. ISSN 0022-0248.
    [American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
    Grant CEP: GA MŠk(CZ) LH14266; GA ČR GJ15-18300Y
    GRANT EU: European Commission(XE) 644260 - INTELUM
    Institucionální podpora: RVO:68378271
    Klíčová slova: single crystal growth * oxides * scintillator materials * scintillators
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.751, rok: 2016

    The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.
    Trvalý link: http://hdl.handle.net/11104/0268397
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