0470883 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
Kamada, K. - Shoji, Y. - Kochurikhin, V.V. - Okumura, S. - Yamamoto, S. - Nagura, A. - Yeom, J.Y. - Kurosawa, S. - Yokota, Y. - Ohashi, Y. - Nikl, Martin - Yoshikawa, A.
Growth and scintillation properties of 3 in. diameter Ce doped Gd₃Ga₃Al₂O₁₂ scintillation single crystal.
Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. ISSN 0022-0248. E-ISSN 1873-5002.
[American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
Grant CEP: GA MŠMT(CZ) LH14266; GA ČR GJ15-18300Y
GRANT EU: European Commission(XE) 644260 - INTELUM
Institucionální podpora: RVO:68378271
Klíčová slova: single crystal growth * oxides * scintillator materials * scintillators
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.751, rok: 2016 ; AIS: 0.402, rok: 2016
DOI: https://doi.org/10.1016/j.jcrysgro.2016.04.037

The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.
Trvalý link: http://hdl.handle.net/11104/0268397