Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade

0469811 - FZÚ 2017 RIV IT eng C - Konferenční příspěvek (zahraniční konf.)
Mikeštíková, Marcela - Kotek, Zdeněk - Šťastný, Jan
Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade.
Proceedings of Science. Vertex2014. Trieste: Proceedings of Science (PoS), 2014, s. 1-11, č. článku 050. ISSN 1824-8039.
[International Workshop on Vertex Detectors /23./. (Vertex 2014). Doksy (CZ), 15.09.2014-19.09.2014]
Grant CEP: GA MŠMT(CZ) LG13009; GA MŠMT 7E12050
GRANT EU: European Commission(XE) 262025 - AIDA
Institucionální podpora: RVO:68378271
Klíčová slova: microstrip detector * radiation damage * ATLAS upgrade * gamma ray irradiation * p irradiation
Kód oboru RIV: BF - Elementární částice a fyzika vys. energií

The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2× 10 15 n eq / cm 2.
Trvalý link: http://hdl.handle.net/11104/0267602