0469570 - FZÚ 2017 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta
Technology of AlSb/GaSb based LED nanostructures for high temperature superlinear luminescence.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 93-96. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
Grant CEP: GA MŠMT LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * LED * AlSb * GaSb * superlinear luminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
DOI: https://doi.org/10.1109/ASDAM.2016.7805903

The superlinear (SL) electroluminescence (EL) of the MOVPE structures based on AlSb/InAs(1-x)Sbx/AlSb deep quantum wells (QWs) grown by MOVPE on n-GaSb:Te substrates was measured. Preparation technology of these structures is described in more detail. Dependencesof the EL spectra and optical power on driving current of nanoheterostructures with a deep AlSb/InAs(1-x)Sbx/AlSb QW for 77 – 300 K temperature range are presented. Intensive two-band SL EL in the 0.5 - 0.8 eV photon energy range and optical power enhancement with the drive current at room temperature caused by the contribution of the additional electron-hole pairs, generated at AlSb/InAs interface, due to the impact ionization were found. Study of the SL EL temperature dependence at 90 – 300 K range, based on our previous work, enabled us to define the role of the first and second heavy hole levels in the radiative recombination process.
Trvalý link: http://hdl.handle.net/11104/0267405