0465333 - ÚPT 2017 FR eng A - Abstrakt
Lalinský, Ondřej - Schauer, Petr - Kučera, M. - Lučeničová, Z. - Hanuš, M.
Effect of Mg-doping on cathodoluminescence properties of GAGG:Ce single crystalline films.
ICDIM 2016. International Conference on Defects in Insulating Materials. Proceedings. Lyon: Université de Lyon, 2016. Th-P-28.
[ICDIM 2016. International Conference on Defects in Insulating Materials. 10.07.2016-15.07.2016, Lyon]
Grant CEP: GA ČR(CZ) GA16-05631S; GA MŠMT(CZ) LO1212; GA MŠMT ED0017/01/01
Institucionální podpora: RVO:68081731
Klíčová slova: multicomponent garnet * epitaxial film * GAGG:Ce * Mg-doping * cathodoluminescence * scintillator * liquid phase epitaxy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Cerium activated single crystals of gadolinium aluminum gallium garnet (GAGG:Ce) are prospective scintillation materials thanks to their high light yield of 50-60 kPh/MeV and fast luminescence decay with a short decay time of 50-80 ns. However, such decay time can be still too high, for example, for special SEM applications where the very fast e-beam scanning is required. Thus, new materials with faster decay have to be found. For this purpose, Mg-doped specimens of the GAGG:Ce multicomponent epitaxial films with different concentration of Mg were grown from lead-free BaO-B2O3-BaF2 flux.
Trvalý link: http://hdl.handle.net/11104/0263944