Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

0464451 - FZÚ 2017 RIV ZA eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Pangrác, Jiří - Brůža, P. - Pánek, D.
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./.Abstracts. Skukuza: SPIE, 2016 - (Schutte, C.). s. 13-13
[SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./. 12.09.2016-14.09.2016, Skukuza]
Grant CEP: GA ČR GA16-11769S; GA MŠMT LM2015087; GA MŠMT LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN QWs * yellow luminescence * photoluminescence * radioluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

InGaN/GaN multiple QW structures were prepared by metal-organic vapour phase epitaxy and characterized by high resolution X-ray diffraction measurements. We demonstrate the structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-luminescence and radioluminescence were measured: we have shown that the ratio of the intensity of QW exciton luminescence to the intensity of the yellow luminescence (YL) band depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak.
Trvalý link: http://hdl.handle.net/11104/0263309