0440071 - FZÚ 2015 RIV NL eng J - Článek v odborném periodiku
Suzuki, A. - Kurosawa, S. - Nagata, S. - Yamamura, T. - Pejchal, Jan - Yamaji, A. - Yokota, Y. - Shirasaki, K. - Homma, Y. - Aoki, D. - Shikama, T. - Yoshikawa, A.
Crystal growth and luminescence properties of Yb-doped Gd₃Al₂Ga₃O₁₂ infra-red scintillator.
Optical Materials. Roč. 36, č. 9 (2014), s. 1484-1487. ISSN 0925-3467. E-ISSN 1873-1252
Institucionální podpora: RVO:68378271
Klíčová slova: infra-red scintillator * radiation therapy * Yb:GAGG * bulk crystal
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.981, rok: 2014 ; AIS: 0.468, rok: 2014
DOI: https://doi.org/10.1016/j.optmat.2014.04.007

Infra-red scintillator crystal 1-mol%-Yb-doped Gd3Al2Ga3O12 has been studied as a novel implantable radiation monitor in radiation therapy.Photoluminescence peaks were detected around 970 and 1030 nm under the 940 nm excitation with a Xe lamp. Infra-red scintillation emissions were clearly observed around 970 and 1030 nm due to Yb3+ 4f–4f transitions under X-ray excitation. Therefore, these results suggest that Yb-doped Gd3Al2Ga3O12 might be used as an infra-red scintillator material.
Trvalý link: http://hdl.handle.net/11104/0243209