0440049 - FZÚ 2015 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Dubecký, F. - Oswald, Jiří - Kindl, Dobroslav - Hubík, Pavel - Gombia, E. - Šagátová, A. - Boháček, P. - Sekáčová, M. - Nečas, V. - Mudroň, J.
Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization.
Proceedings of the 20th International Conference on Applied Physics of Condensed Matter. Bratislava: FEI STU, 2014 - (Vajda, J.; Jamnický, I.), s. 214-218. ISBN 978-80-227-4179-8.
[International Conference on Applied Physics of Condensed Matter /20./. Štrbské Pleso (SK), 25.06.2014-27.06.2014]
Institucionální podpora: RVO:68378271
Klíčová slova: current-voltage measurements * photocurrent spectroscopy * GaAs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The work reports on the photocurrent (PC) study of diodes based on bulk semi-insulating (SI) GaAs with novel contacts including low work function metals, such as Gd and Nd. SI GaAs sandwich-like structures with topside electrodes of Gd/Au, Nd/Au, Pt/Au, and AuGeNi eutectic alloy and bottom AuGeNi eutectic alloy were fabricated. Their electrical and photoelectronic properties were investigated by current-voltage measurements and PC spectroscopy performed at room temperature in the spectral range of 600-1000 nm. A simple photovoltaic model was used to give a qualitative explanation of the observed spectral characteristics at zero bias.
Trvalý link: http://hdl.handle.net/11104/0243195